The IRF640SPBF is a N-channel MOSFET in a D2PAK (TO-263) surface mount package, rated for a drain-source voltage of 200 V and a continuous drain current of 18 A at 25 °C. It has a maximum on-state resistance of 0.18 Ω at V<sub>GS</sub> = 10 V and a total gate charge of 70 nC. The device supports an avalanche energy of 580 mJ and operates from -55 °C to 150 °C. It is not RoHS-compliant due to lead-containing terminations.
N CHANNEL MOSFET, 200V, 18A, D2-PAK; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:18A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: No
| Newark, An Avnet Company | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 27AC6877 |
| Product Name | N Channel Mosfet, 200V, 18A, D2-Pak; Channel Type Vishay |
| Polarity | N-Channel |
