Vishay Intertechnology, Inc. Single FETs, MOSFETs IRF640L

Description
N-Channel 200V 18A (Tc) 3.1W (Ta), 130W (Tc) Through Hole I2PAK
Request a Quote Datasheet
Description
N-Channel 200V 18A (Tc) 3.1W (Ta), 130W (Tc) Through Hole I2PAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRF640L-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF640L-ND
Single FETs, MOSFETs IRF640L-ND
N-Channel 200V 18A (Tc) 3.1W (Ta), 130W (Tc) Through Hole I2PAK

N-Channel 200V 18A (Tc) 3.1W (Ta), 130W (Tc) Through Hole I2PAK

Buy Now Datasheet
FETs - Single - IRF640L - 1187114-IRF640L - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IRF640L
1187114-IRF640L
FETs - Single - IRF640L 1187114-IRF640L
Manufacturer: Vishay Siliconix Win Source Part Number: 1187114-IRF640L Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: I2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-262-3 Long Leads, I2Pak, TO-262AA Power Dissipation (Maximum): 3.1W, 130W Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 200V Id - Continuous Drain Current: 18A Rds On (Maximum) at Id, Vgs: 180mOhm at 11A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 70nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 1300pF at 25V

Manufacturer: Vishay Siliconix
Win Source Part Number: 1187114-IRF640L
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: I2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-262-3 Long Leads, I2Pak, TO-262AA
Power Dissipation (Maximum): 3.1W, 130W
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 200V
Id - Continuous Drain Current: 18A
Rds On (Maximum) at Id, Vgs: 180mOhm at 11A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 70nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 1300pF at 25V

Buy Now
Singapore
200V 18A MOSFET Transistor
278-IRF640L
200V 18A MOSFET Transistor 278-IRF640L
MOSFET N-CH 200V 18A I2PAK Product overview: IRF640L from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 18A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 18A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF640L can be used for catalog matching and distributor lookup.

MOSFET N-CH 200V 18A I2PAK Product overview: IRF640L from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 18A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 18A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF640L can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF640L - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF640L
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF640L
MOSFET N-CH 200V 18A I2PAK

MOSFET N-CH 200V 18A I2PAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IRF640L-ND 1187114-IRF640L 278-IRF640L IRF640L
Product Name Single FETs, MOSFETs FETs - Single - IRF640L 200V 18A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-262-3 Long Leads, I2PAK, TO-262AA SOT3 Tube +/- 20V
V(BR)DSS 200 volts
QG 70 nC
Unlock Full Specs
to access all available technical data