N-Channel 200V 5.2A (Tc) 50W (Tc) Through Hole TO-220AB
Manufacturer: Vishay Siliconix
Win Source Part Number: 1187082-IRF620
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -65°C ~ 150°C
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-220-3
Power Dissipation (Maximum): 50W
Alternative Parts (Cross-Reference): FQP7N20L; PHP5N20E; IRF620LPBF;
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Power Management, Commercial
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 200V
Id - Continuous Drain Current: 5.2A
Rds On (Maximum) at Id, Vgs: 800mOhm at 3.1A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 14nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 260pF at 25V
DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 5A I(D), 200V, 0.8OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY
| DigiKey | Win Source Electronics | Radwell International | |
|---|---|---|---|
| Product Category | Transistors | Power MOSFET | RF Transistors |
| Product Number | IRF620IR-ND | 1187082-IRF620 | 56674013 |
| Product Name | Single FETs, MOSFETs | FETs - Single - IRF620 | Transistor |
| Polarity | N-Channel | N-Channel; N-Channel | |
| Package Type | TO-220; TO-220-3 | TO-220; SOT3 | |
| Operating Mode | Enhancement | ||
| V(BR)DSS | 200 volts |
