Vishay Intertechnology, Inc. FETs - Single - IRF620 IRF620

Description
Manufacturer: Vishay Siliconix Win Source Part Number: 1187082-IRF620 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -65°C ~ 150°C Manufacturer Homepage: www.st.com Manufacturer Package: TO-220-3 Power Dissipation (Maximum): 50W Alternative Parts (Cross-Reference): FQP7N20L; PHP5N20E; IRF620LPBF; Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance Application Field: Used in Industrial, Power Management, Commercial Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 200V Id - Continuous Drain Current: 5.2A Rds On (Maximum) at Id, Vgs: 800mOhm at 3.1A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 14nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 260pF at 25V
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Description
Manufacturer: Vishay Siliconix Win Source Part Number: 1187082-IRF620 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -65°C ~ 150°C Manufacturer Homepage: www.st.com Manufacturer Package: TO-220-3 Power Dissipation (Maximum): 50W Alternative Parts (Cross-Reference): FQP7N20L; PHP5N20E; IRF620LPBF; Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance Application Field: Used in Industrial, Power Management, Commercial Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 200V Id - Continuous Drain Current: 5.2A Rds On (Maximum) at Id, Vgs: 800mOhm at 3.1A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 14nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 260pF at 25V
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Suppliers

Company
Product
Description
Supplier Links
FETs - Single - IRF620 - 1187082-IRF620 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IRF620
1187082-IRF620
FETs - Single - IRF620 1187082-IRF620
Manufacturer: Vishay Siliconix Win Source Part Number: 1187082-IRF620 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -65°C ~ 150°C Manufacturer Homepage: www.st.com Manufacturer Package: TO-220-3 Power Dissipation (Maximum): 50W Alternative Parts (Cross-Reference): FQP7N20L; PHP5N20E; IRF620LPBF; Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance Application Field: Used in Industrial, Power Management, Commercial Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 200V Id - Continuous Drain Current: 5.2A Rds On (Maximum) at Id, Vgs: 800mOhm at 3.1A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 14nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 260pF at 25V

Manufacturer: Vishay Siliconix
Win Source Part Number: 1187082-IRF620
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -65°C ~ 150°C
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-220-3
Power Dissipation (Maximum): 50W
Alternative Parts (Cross-Reference): FQP7N20L; PHP5N20E; IRF620LPBF;
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Power Management, Commercial
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 200V
Id - Continuous Drain Current: 5.2A
Rds On (Maximum) at Id, Vgs: 800mOhm at 3.1A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 14nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 260pF at 25V

Buy Now
Singapore
200V 5.2A MOSFET Transistor
278-IRF620
200V 5.2A MOSFET Transistor 278-IRF620
MOSFET N-CH 200V 5.2A TO220AB Product overview: IRF620 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 5.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 5.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF620 can be used for catalog matching and distributor lookup.

MOSFET N-CH 200V 5.2A TO220AB Product overview: IRF620 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 5.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 5.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF620 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - IRF620IR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF620IR-ND
Single FETs, MOSFETs IRF620IR-ND
N-Channel 200V 5.2A (Tc) 50W (Tc) Through Hole TO-220AB

N-Channel 200V 5.2A (Tc) 50W (Tc) Through Hole TO-220AB

Buy Now Datasheet
Transistor - 56674013 - Radwell International
Willingboro, NJ, United States
Transistor
56674013
Transistor 56674013
DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 5A I(D), 200V, 0.8OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY

DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 5A I(D), 200V, 0.8OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Radwell International
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 1187082-IRF620 278-IRF620 IRF620IR-ND 56674013
Product Name FETs - Single - IRF620 200V 5.2A MOSFET Transistor Single FETs, MOSFETs Transistor
Polarity N-Channel; N-Channel N-Channel
Operating Mode Enhancement
V(BR)DSS 200 volts
QG 14 nC
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