Vishay Intertechnology, Inc. 200V 5.2A MOSFET Transistor IRF620

MOSFET N-CH 200V 5.2A TO220AB Product overview: IRF620 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 5.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 5.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF620 can be used for catalog matching and distributor lookup.

Manufacturer: Vishay Siliconix
Win Source Part Number: 1187082-IRF620
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -65°C ~ 150°C
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-220-3
Power Dissipation (Maximum): 50W
Alternative Parts (Cross-Reference): FQP7N20L; PHP5N20E; IRF620LPBF;
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Power Management, Commercial
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 200V
Id - Continuous Drain Current: 5.2A
Rds On (Maximum) at Id, Vgs: 800mOhm at 3.1A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 14nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 260pF at 25V

N-Channel 200V 5.2A (Tc) 50W (Tc) Through Hole TO-220AB