Manufacturer: Vishay Siliconix
Win Source Part Number: 1187080-IRF614
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.intersil.com/cda
Manufacturer Package: TO-220-3
Power Dissipation (Maximum): 36W
Alternative Parts (Cross-Reference): FQP4N25; IRF614PBF;
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 250V
Id - Continuous Drain Current: 2.7A
Rds On (Maximum) at Id, Vgs: 2Ohm at 1.6A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 8.2nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 140pF at 25V
N-Channel 250V 2.7A (Tc) 36W (Tc) Through Hole TO-220AB
MOSFET N-CH 250V 2.7A TO-220AB
| Win Source Electronics | DigiKey | Utmel Electronic Limited | |
|---|---|---|---|
| Product Category | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1187080-IRF614 | IRF614-ND | 880-IRF614 |
| Product Name | FETs - Single - IRF614 | Single FETs, MOSFETs | MOSFET N-CH 250V 2.7A TO-220AB |
| Polarity | N-Channel; N-Channel | N-Channel | |
| V(BR)DSS | 250 volts | ||
| QG | 8.2 nC | ||
| PD | 36000 milliwatts | 36000 milliwatts |
