Manufacturer: Vishay Siliconix
Win Source Part Number: 1187077-IRF610S
Packaging: Tube
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Maximum): 3W, 36W
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 200V
Id - Continuous Drain Current: 3.3A
Rds On (Maximum) at Id, Vgs: 1.5Ohm at 2A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 8.2nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 140pF at 25V
N-Channel 200V 3.3A (Tc) 3W (Ta), 36W (Tc) Surface Mount D²PAK (TO-263)
MOSFET N-CH 200V 3.3A D2PAK
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Power MOSFET | Transistors | RF Transistors |
| Product Number | 1187077-IRF610S | IRF610S-ND | IRF610S |
| Product Name | FETs - Single - IRF610S | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | |
| V(BR)DSS | 200 volts | ||
| QG | 8.2 nC | ||
| PD | 3000 to 36000 milliwatts |
