N-Channel 100V 28A (Tc) 3.7W (Ta), 150W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 100V 28A (Tc) 3.7W (Ta), 150W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 100V 28A (Tc) 3.7W (Ta), 150W (Tc) Surface Mount D²PAK (TO-263)
MOSFET N-CH 100V 28A D2PAK
Manufacturer: Vishay
Win Source Part Number: 1187059-IRF540STRLPB
Packaging: Reel - TR
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Family Name: IRF540S
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.vishay.com
Manufacturer Package: D2PAK (TO-263)
Channel Type Type: N
Drain Source Voltage: 100V
Vgs(th) (Maximum) @ Id: 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 72nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 1700pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 3.7W (Ta), 150W (Tc)
Rds On (Maximum) @ Id, Vgs: 77 mOhm @ 17A, 10V
Alternative Parts (Cross-Reference): NP24N10ELB; RF1S540SM; RSJ300N10TL;
Introduction Date: March 27, 2007
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Limited
MOSFET N-CH 100V HEXFET MOSFET D2-PA
MOSFET N-CH 100V 28A D2PAK
MOSFET, N CH, 100V, 28A, TO-263-3; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:28A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes
N CHANNEL MOSFET, 100V, 28A SMD-220, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:28A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4VRoHS Compliant: Yes
MOSFET, N-CH, 100V, 28A, TO-263 ROHS COMPLIANT: YES
| DigiKey | ODG (Origin Data Global) | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRF540STRLPBFDKR-ND | IRF540STRLPBF | 1187059-IRF540STRLPBF | IRF540STRLPBF | IRF540STRLPBF | 05W6868 | 31K2162 | 56AJ9912 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | Electronic Surplus - IRF540STRLPBF | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N Ch, 100V, 28A, To-263-3; Channel Type Vishay | N Channel Mosfet, 100V, 28A Smd-220, Full Reel; Channel Type Vishay | Mosfet, N-Ch, 100V, 28A, To-263 Rohs Compliant Vishay |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | |||||
| Package Type | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263; SOT3 | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-3; TO-263 | TO-3 | TO-3; TO-263 | |
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 100 volts | |||||||
| IDSS | 28000 milliamps | 28000 milliamps | 28000 milliamps |
