Vishay Intertechnology, Inc. Discrete Semiconductor Products - Diodes - Bridge Rectifiers G2SB60-M3/51

Description
Win Source Part Number: 1025260-G2SB60-M3/51 Category: Discrete Semiconductor Products>Diodes - Bridge Rectifiers Package: Tray Standard Package: 400 Technology: Standard Diode Type: Single Phase Current - Average Rectified (Io): 1.5 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 750 mA Current - Reverse Leakage @ Vr: 5 µA @ 200 V Voltage - Peak Reverse (Max): 600 V Mounting Type: Through Hole Package / Case: 4-SIP, GBL Supplier Device Package: GBL Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 46 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.10.0080 Mfr: Vishay General Semiconductor - Diodes Division Base Product Number: G2SB60 Product Status: Obsolete
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Description
Win Source Part Number: 1025260-G2SB60-M3/51 Category: Discrete Semiconductor Products>Diodes - Bridge Rectifiers Package: Tray Standard Package: 400 Technology: Standard Diode Type: Single Phase Current - Average Rectified (Io): 1.5 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 750 mA Current - Reverse Leakage @ Vr: 5 µA @ 200 V Voltage - Peak Reverse (Max): 600 V Mounting Type: Through Hole Package / Case: 4-SIP, GBL Supplier Device Package: GBL Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 46 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.10.0080 Mfr: Vishay General Semiconductor - Diodes Division Base Product Number: G2SB60 Product Status: Obsolete
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Discrete Semiconductor Products - Diodes - Bridge Rectifiers - 1025260-G2SB60-M3/51 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Diodes - Bridge Rectifiers
1025260-G2SB60-M3/51
Discrete Semiconductor Products - Diodes - Bridge Rectifiers 1025260-G2SB60-M3/51
Win Source Part Number: 1025260-G2SB60-M3/51 Category: Discrete Semiconductor Products>Diodes - Bridge Rectifiers Package: Tray Standard Package: 400 Technology: Standard Diode Type: Single Phase Current - Average Rectified (Io): 1.5 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 750 mA Current - Reverse Leakage @ Vr: 5 µA @ 200 V Voltage - Peak Reverse (Max): 600 V Mounting Type: Through Hole Package / Case: 4-SIP, GBL Supplier Device Package: GBL Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 46 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.10.0080 Mfr: Vishay General Semiconductor - Diodes Division Base Product Number: G2SB60 Product Status: Obsolete

Win Source Part Number: 1025260-G2SB60-M3/51
Category: Discrete Semiconductor Products>Diodes - Bridge Rectifiers
Package: Tray
Standard Package: 400
Technology: Standard
Diode Type: Single Phase
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 750 mA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Peak Reverse (Max): 600 V
Mounting Type: Through Hole
Package / Case: 4-SIP, GBL
Supplier Device Package: GBL
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 46 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.10.0080
Mfr: Vishay General Semiconductor - Diodes Division
Base Product Number: G2SB60
Product Status: Obsolete

Buy Now Datasheet
600V 1.5A Diode and Rectifier - 299-G2SB60-M3/51 - ERSAELECTRONICS PTE. LTD.
Singapore
600V 1.5A Diode and Rectifier
299-G2SB60-M3/51
600V 1.5A Diode and Rectifier 299-G2SB60-M3/51
BRIDGE RECT 1PHASE 600V 1.5A GBL Product overview: G2SB60-M3/51 from Vishay General Semiconductor – Diodes Division is a Diode and Rectifier for rectification, reverse-polarity protection, signal routing, surge suppression, and electronic circuit reliability. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 1.5A. Search-friendly keywords include diode, rectifier, Schottky, switching diode, 600V, 1.5A, Diode and Rectifier, Bridge Rectifiers. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 299-G2SB60-M3/51 can be used for catalog matching and distributor lookup.

BRIDGE RECT 1PHASE 600V 1.5A GBL Product overview: G2SB60-M3/51 from Vishay General Semiconductor – Diodes Division is a Diode and Rectifier for rectification, reverse-polarity protection, signal routing, surge suppression, and electronic circuit reliability. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 1.5A. Search-friendly keywords include diode, rectifier, Schottky, switching diode, 600V, 1.5A, Diode and Rectifier, Bridge Rectifiers. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 299-G2SB60-M3/51 can be used for catalog matching and distributor lookup.

Supplier's Site
Shenzhen, China
Discrete Semiconductor Products - Diodes - Bridge Rectifiers
G2SB60-M3/51
Discrete Semiconductor Products - Diodes - Bridge Rectifiers G2SB60-M3/51
BRIDGE RECT 1PHASE 600V 1.5A GBL

BRIDGE RECT 1PHASE 600V 1.5A GBL

Supplier's Site
Sheung Wan, Hong Kong
Bridge Rectifiers
G2SB60-M3/51
Bridge Rectifiers G2SB60-M3/51
Bridge Rectifiers 1.5A,600V,GPP,INLINE BRIDGE

Bridge Rectifiers 1.5A,600V,GPP,INLINE BRIDGE

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Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Acme Chip Technology Co., Limited VAST STOCK CO., LIMITED
Product Category Diodes Rectifiers Rectifiers Rectifiers
Product Number 1025260-G2SB60-M3/51 299-G2SB60-M3/51 G2SB60-M3/51 G2SB60-M3/51
Product Name Discrete Semiconductor Products - Diodes - Bridge Rectifiers 600V 1.5A Diode and Rectifier Discrete Semiconductor Products - Diodes - Bridge Rectifiers Bridge Rectifiers
Diode Type Single Phase
VF 1 volts 1 volts
IR 0.0050 mA
Tj -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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