The CHK8015-99F is a 16W Gallium Nitride on Silicon Carbide (GaN on SiC) High Electron Mobility Transistor (HEMT). This product offers a general purpose and broadband solution for a variety of RF power applications. The circuit is manufactured with a 0.25um gate length GaN on SiC process. Available in bare die format.
| Richardson RFPD | |
|---|---|
| Product Category | RF Transistors |
| Product Number | CHK8015-99F |
| Product Name | RF Power Transistor |
| Transistor Technology / Material | GaN |
