Vishay Precision Group RF Power Transistor CHK5010-99F/00

Description
The CHK5010-99F is a 4W GaN on SiC High Electron Mobility Transistor (HEMT). The CHK5010-99F offers a general purpose and broadband solution for a variety of RF power applications. The CHK5010-99F can be used up to 12 GHz in pulsed or CW operation.
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Description
The CHK5010-99F is a 4W GaN on SiC High Electron Mobility Transistor (HEMT). The CHK5010-99F offers a general purpose and broadband solution for a variety of RF power applications. The CHK5010-99F can be used up to 12 GHz in pulsed or CW operation.
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Suppliers

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Product
Description
Supplier Links
RF Power Transistor - CHK5010-99F/00 - Richardson RFPD
Downers Grove, IL, United States
RF Power Transistor
CHK5010-99F/00
RF Power Transistor CHK5010-99F/00
The CHK5010-99F is a 4W GaN on SiC High Electron Mobility Transistor (HEMT). The CHK5010-99F offers a general purpose and broadband solution for a variety of RF power applications. The CHK5010-99F can be used up to 12 GHz in pulsed or CW operation.

The CHK5010-99F is a 4W GaN on SiC High Electron Mobility Transistor (HEMT). The CHK5010-99F offers a general purpose and broadband solution for a variety of RF power applications. The CHK5010-99F can be used up to 12 GHz in pulsed or CW operation.

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category RF Transistors
Product Number CHK5010-99F/00
Product Name RF Power Transistor
Transistor Technology / Material GaN
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