Vishay Precision Group RF & MW Power Amplifier CHA6015-99F/00

Description
2-8 GHz High Power Amplifier GaAs Monolithic Microwave IC. The CHA6015-99F is a HPA that provides typically 37.5 dBm output power on the frequency band 2-8 GHz. The circuit is dedicated to defence applications and also well suited for a wide range of microwave applications and systems. The circuit is manufactured with a pHEMT process, 0.25um gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form.
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Description
2-8 GHz High Power Amplifier GaAs Monolithic Microwave IC. The CHA6015-99F is a HPA that provides typically 37.5 dBm output power on the frequency band 2-8 GHz. The circuit is dedicated to defence applications and also well suited for a wide range of microwave applications and systems. The circuit is manufactured with a pHEMT process, 0.25um gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form.
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Suppliers

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Product
Description
Supplier Links
RF & MW Power Amplifier - CHA6015-99F/00 - Richardson RFPD
Downers Grove, IL, United States
RF & MW Power Amplifier
CHA6015-99F/00
RF & MW Power Amplifier CHA6015-99F/00
2-8 GHz High Power Amplifier GaAs Monolithic Microwave IC. The CHA6015-99F is a HPA that provides typically 37.5 dBm output power on the frequency band 2-8 GHz. The circuit is dedicated to defence applications and also well suited for a wide range of microwave applications and systems. The circuit is manufactured with a pHEMT process, 0.25um gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form.

2-8 GHz High Power Amplifier GaAs Monolithic Microwave IC. The CHA6015-99F is a HPA that provides typically 37.5 dBm output power on the frequency band 2-8 GHz. The circuit is dedicated to defence applications and also well suited for a wide range of microwave applications and systems. The circuit is manufactured with a pHEMT process, 0.25um gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form.

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Technical Specifications

  Richardson RFPD
Product Category RF Amplifiers
Product Number CHA6015-99F/00
Product Name RF & MW Power Amplifier
Amplifier Type Power Amplifier
Frequency Range 2000 to 8000 MHz
Maximum Gain 18.5 dB
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