Vishay Precision Group RF & MW Driver Amplifier CHA5014-99F/00

Description
X Band HBT Driver Amplifier. The CHA5014 chip is a monolithic two-stage medium power amplifier designed for X band applications. Moreover this amplifier is relevant for systems that require an output power weakly sensitive to temperature. This device is manufactured using a GalnP HBT process, including via holes through the substrate and air bridges. A nitride layer protects the transistors and the passive components. A special control circuit is implemented to stabilize the output power in temperature.
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Description
X Band HBT Driver Amplifier. The CHA5014 chip is a monolithic two-stage medium power amplifier designed for X band applications. Moreover this amplifier is relevant for systems that require an output power weakly sensitive to temperature. This device is manufactured using a GalnP HBT process, including via holes through the substrate and air bridges. A nitride layer protects the transistors and the passive components. A special control circuit is implemented to stabilize the output power in temperature.
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Suppliers

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RF & MW Driver Amplifier - CHA5014-99F/00 - Richardson RFPD
Downers Grove, IL, United States
RF & MW Driver Amplifier
CHA5014-99F/00
RF & MW Driver Amplifier CHA5014-99F/00
X Band HBT Driver Amplifier. The CHA5014 chip is a monolithic two-stage medium power amplifier designed for X band applications. Moreover this amplifier is relevant for systems that require an output power weakly sensitive to temperature. This device is manufactured using a GalnP HBT process, including via holes through the substrate and air bridges. A nitride layer protects the transistors and the passive components. A special control circuit is implemented to stabilize the output power in temperature.

X Band HBT Driver Amplifier. The CHA5014 chip is a monolithic two-stage medium power amplifier designed for X band applications. Moreover this amplifier is relevant for systems that require an output power weakly sensitive to temperature. This device is manufactured using a GalnP HBT process, including via holes through the substrate and air bridges. A nitride layer protects the transistors and the passive components. A special control circuit is implemented to stabilize the output power in temperature.

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Technical Specifications

  Richardson RFPD
Product Category RF Amplifiers
Product Number CHA5014-99F/00
Product Name RF & MW Driver Amplifier
Frequency Range 8500 to 11000 MHz
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