Vishay Precision Group RF & MW LNA CHA3666-99F/00

Description
The CHA3666 is a two-stage self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
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Description
The CHA3666 is a two-stage self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
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Suppliers

Company
Product
Description
Supplier Links
RF & MW LNA - CHA3666-99F/00 - Richardson RFPD
Downers Grove, IL, United States
RF & MW LNA
CHA3666-99F/00
RF & MW LNA CHA3666-99F/00
The CHA3666 is a two-stage self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

The CHA3666 is a two-stage self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

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Technical Specifications

  Richardson RFPD
Product Category RF Amplifiers
Product Number CHA3666-99F/00
Product Name RF & MW LNA
Amplifier Type Low Noise Amplifier
Frequency Range 6000 to 17000 MHz
Maximum Gain 21 dB
Output Power 17 dBm
Noise Figure 1.8 dB
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