Vishay Precision Group mmW Driver Amplifier CHA3063-99F/00

Description
The CHA3063 is a two-stage general purpose monolithic medium power amplifier. The backside of the chip is both RF and DC grounded. This helps to simplify the assembly process. The circuit is manufactured with a pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form.
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Description
The CHA3063 is a two-stage general purpose monolithic medium power amplifier. The backside of the chip is both RF and DC grounded. This helps to simplify the assembly process. The circuit is manufactured with a pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form.
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Suppliers

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Product
Description
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mmW Driver Amplifier - CHA3063-99F/00 - Richardson RFPD
Downers Grove, IL, United States
mmW Driver Amplifier
CHA3063-99F/00
mmW Driver Amplifier CHA3063-99F/00
The CHA3063 is a two-stage general purpose monolithic medium power amplifier. The backside of the chip is both RF and DC grounded. This helps to simplify the assembly process. The circuit is manufactured with a pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form.

The CHA3063 is a two-stage general purpose monolithic medium power amplifier. The backside of the chip is both RF and DC grounded. This helps to simplify the assembly process. The circuit is manufactured with a pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form.

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category RF Amplifiers
Product Number CHA3063-99F/00
Product Name mmW Driver Amplifier
Frequency Range 5500 to 23000 MHz
Maximum Gain 19 dB
Output Power 18 dBm
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