The circuit is a three-stage self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form.
| Richardson RFPD | |
|---|---|
| Product Category | RF Amplifiers |
| Product Number | CHA2069-99F/00 |
| Product Name | mmW LNA |
| Amplifier Type | Low Noise Amplifier |
| Frequency Range | 18000 to 31000 MHz |
| Maximum Gain | 22 dB |
| Output Power | 10 dBm |
| Noise Figure | 2.5 dB |
