VBsemi Electronics Co. Ltd. Transistors VBZE80N10

Description
100V 25A 55mΩ@10V,25A 1 N-Channel TO-252-2 MOSFETs ROHS
Description
100V 25A 55mΩ@10V,25A 1 N-Channel TO-252-2 MOSFETs ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - VBZE80N10 - ODG (Origin Data Global)
Shenzhen, China
Transistors
VBZE80N10
Transistors VBZE80N10
100V 25A 55mΩ@10V,25A 1 N-Channel TO-252-2 MOSFETs ROHS

100V 25A 55mΩ@10V,25A 1 N-Channel TO-252-2 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number VBZE80N10
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

Transistor - 444000 - Radwell International
Fuji Electric Corp. of America
View Details
45 V, 500 mA NPN general-purpose transistors - BC817-16W,135 - Nexperia B.V.
Specs
Transistor Type BJT
Package Type SOT323; SOT323 SOT323
View Details
4 suppliers
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMCQ120R120M1T - AIMCQ120R120M1T - Infineon Technologies AG
Specs
Transistor Type MOSFET
Polarity N-Channel; N
Transistor Technology / Material Silicon carbide
View Details
920A IGBT MODULE FOR ONE PHASE - SK-H1-QOUT-E920 - Allen-Bradley / Rockwell Automation
Allen-Bradley / Rockwell Automation
Specs
Transistor Type IGBT
View Details