VBsemi Electronics Co. Ltd. Transistors VBZA9926

Description
20V 5.5A 23mΩ@4.5V,5.5A 2 N-Channel SOP-8 MOSFETs ROHS
  • Transistors - VBZA9926 - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
20V 5.5A 23mΩ@4.5V,5.5A 2 N-Channel SOP-8 MOSFETs ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - VBZA9926 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
VBZA9926
Transistors VBZA9926
20V 5.5A 23mΩ@4.5V,5.5A 2 N-Channel SOP-8 MOSFETs ROHS

20V 5.5A 23mΩ@4.5V,5.5A 2 N-Channel SOP-8 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number VBZA9926
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

Igbt, 600V, 30A, Module; Continuous Collector Current Fuji Electric - 56P5506 - Newark, An Avnet Company
Fuji Electric Corp. of America
Igbt, 600V, 30A, Module; Continuous Collector Current Fuji Electric
6MBP30RH-060-50
Specs
Transistor Type IGBT
Package Type TO-3
View Details
45 V, 500 mA PNP general-purpose transistors - BC807-40QC-QZ - Nexperia B.V.
Nexperia B.V.
45 V, 500 mA PNP general-purpose transistors
BC807-40QC-QZ
Specs
Transistor Type BJT
Package Type SOT8009 SOT8009
View Details
5 suppliers
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMDQ75R016M2H - AIMDQ75R016M2H - Infineon Technologies AG
Infineon Technologies AG
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMDQ75R016M2H
AIMDQ75R016M2H
Specs
Transistor Type MOSFET
Polarity N-Channel; N
Transistor Technology / Material Silicon carbide
View Details
502A IGBT MODULE FOR ONE PHASE 600/690V - SK-H1-QOUT-E502 - Allen-Bradley / Rockwell Automation
Allen-Bradley / Rockwell Automation
502A IGBT MODULE FOR ONE PHASE 600/690V
SK-H1-QOUT-E502
Specs
Transistor Type IGBT
View Details