VBsemi Electronics Co. Ltd. Transistors VBQA1303

Description
30V 80A 210W 3mΩ@10V,80A 2.5V@250uA 1 N-Channel QFN-8(5x6) MOSFETs ROHS
  • Transistors - VBQA1303 - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote
Description
30V 80A 210W 3mΩ@10V,80A 2.5V@250uA 1 N-Channel QFN-8(5x6) MOSFETs ROHS
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Transistors - VBQA1303 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
VBQA1303
Transistors VBQA1303
30V 80A 210W 3mΩ@10V,80A 2.5V@250uA 1 N-Channel QFN-8(5x6) MOSFETs ROHS

30V 80A 210W 3mΩ@10V,80A 2.5V@250uA 1 N-Channel QFN-8(5x6) MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number VBQA1303
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

Transistor - 34002722 - Radwell International
Fuji Electric Corp. of America
Transistor
EV1234M
View Details
Bipolar Transistors - 1660336 - RS Components, Ltd.
RS Components, Ltd.
Bipolar Transistors
1660336
Specs
Transistor Type BJT
Polarity NPN
Package Type SOT89; SOT-89
View Details
1150A IGBT MODULE FOR ONE PHASE - SK-H1-QOUT-D1K1 - Allen-Bradley / Rockwell Automation
Allen-Bradley / Rockwell Automation
1150A IGBT MODULE FOR ONE PHASE
SK-H1-QOUT-D1K1
Specs
Transistor Type IGBT
View Details
Single FETs, MOSFETs - 448-AIMZA75R008M1HXKSA1-ND - DigiKey
Infineon Technologies AG
Single FETs, MOSFETs
AIMZA75R008M1HXKSA1
Specs
Polarity N-Channel
Transistor Technology / Material Silicon Carbide
Package Type TO-247; TO-247-4
View Details