VBsemi Electronics Co. Ltd. Transistors VBMB16R08

Description
600V 8A 880mΩ@10V,8A 1 N-Channel TO-220F-3 MOSFETs ROHS
  • Transistors - VBMB16R08 - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote
Description
600V 8A 880mΩ@10V,8A 1 N-Channel TO-220F-3 MOSFETs ROHS
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Transistors - VBMB16R08 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
VBMB16R08
Transistors VBMB16R08
600V 8A 880mΩ@10V,8A 1 N-Channel TO-220F-3 MOSFETs ROHS

600V 8A 880mΩ@10V,8A 1 N-Channel TO-220F-3 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number VBMB16R08
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

MOSFETs - 1708997 - RS Components, Ltd.
RS Components, Ltd.
MOSFETs
1708997
Specs
Transistor Type MOSFET
Polarity N-Channel
Package Type Sot-89
View Details
CSD19531KCS 100V, 6.4mOhm, TO-220 NexFET™ Power MOSFET - CSD19531KCS - Texas Instruments
Texas Instruments
CSD19531KCS 100V, 6.4mOhm, TO-220 NexFET™ Power MOSFET
CSD19531KCS
Specs
Transistor Type Power-MOSFET
Package Type TO-220
View Details
8 suppliers
Current Collector high-performance aviation current collector DHK160-3-90A for an aerospace - - JiuJiang Ingiant Technology Co., Ltd.
JiuJiang Ingiant Technology Co., Ltd.
Current Collector high-performance aviation current collector DHK160-3-90A for an aerospace
View Details
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMZHN120R120M1T - AIMZHN120R120M1T - Infineon Technologies AG
Infineon Technologies AG
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMZHN120R120M1T
AIMZHN120R120M1T
Specs
Transistor Type MOSFET
Polarity N-Channel; N
Transistor Technology / Material Silicon carbide
View Details