VBsemi Electronics Co. Ltd. Transistors VBM18R06S

Description
800V 6A 800mΩ@10V 4.5V 1 N-Channel TO-220AB MOSFETs ROHS
Request a Quote
Description
800V 6A 800mΩ@10V 4.5V 1 N-Channel TO-220AB MOSFETs ROHS
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Transistors - VBM18R06S - ODG (Origin Data Global)
Shenzhen, China
Transistors
VBM18R06S
Transistors VBM18R06S
800V 6A 800mΩ@10V 4.5V 1 N-Channel TO-220AB MOSFETs ROHS

800V 6A 800mΩ@10V 4.5V 1 N-Channel TO-220AB MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number VBM18R06S
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

Single FETs, MOSFETs - 448-AIMBG120R080M1XTMA1TR-ND - DigiKey
Specs
Polarity N-Channel
Transistor Technology / Material Silicon Carbide
Package Type TO-263; TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
View Details
2 suppliers
DC - 18 GHz, 12 Watt Discrete Power GaN on SiC HEMT - TGF2023-2-02 - Qorvo
Specs
Transistor Type HEMT
Transistor Technology / Material GaN on SiC
Package Type Die
View Details
4 suppliers
Integrated Circuits (ICs) - PMIC - Motor Drivers, Controllers - 1253319-DRV8886ATPWP - Win Source Electronics
Specs
Transistor Type Bipolar RF; MOSFET; Power-MOSFET
Package Type SOT3
View Details