VBsemi Electronics Co. Ltd. Transistors VBL2610N

Description
60V 30A 60W 64mΩ@10V,30A 3V@250uA 1 Piece P-Channel TO-263 MOSFETs ROHS
Request a Quote
Description
60V 30A 60W 64mΩ@10V,30A 3V@250uA 1 Piece P-Channel TO-263 MOSFETs ROHS
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Transistors - VBL2610N - ODG (Origin Data Global)
Shenzhen, China
Transistors
VBL2610N
Transistors VBL2610N
60V 30A 60W 64mΩ@10V,30A 3V@250uA 1 Piece P-Channel TO-263 MOSFETs ROHS

60V 30A 60W 64mΩ@10V,30A 3V@250uA 1 Piece P-Channel TO-263 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number VBL2610N
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

TRANSISTORS - Transistors (BJT) - Single - 2PB709ASL/PA215 - 855010-2PB709ASL/PA215 - Win Source Electronics
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details
IGBT - 20563721 - Radwell International
Fuji Electric Corp. of America
Specs
Transistor Type IGBT
View Details
N-Channel Power MOSFET - 2N7002 - Infineon Technologies AG
Infineon Technologies AG
Specs
Transistor Type MOSFET; Power-MOSFET
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
View Details