VBsemi Electronics Co. Ltd. Transistors VBL1307

Description
30V 70A 7.5mΩ@10V,20A 71W 2.5V@250uA 1 N-Channel TO-263 MOSFETs ROHS
  • Transistors - VBL1307 - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
30V 70A 7.5mΩ@10V,20A 71W 2.5V@250uA 1 N-Channel TO-263 MOSFETs ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - VBL1307 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
VBL1307
Transistors VBL1307
30V 70A 7.5mΩ@10V,20A 71W 2.5V@250uA 1 N-Channel TO-263 MOSFETs ROHS

30V 70A 7.5mΩ@10V,20A 71W 2.5V@250uA 1 N-Channel TO-263 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number VBL1307
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

590A IGBT MODULE FOR ONE PHASE 400/480V - SK-H1-QOUT-D590 - Allen-Bradley / Rockwell Automation
Allen-Bradley / Rockwell Automation
590A IGBT MODULE FOR ONE PHASE 400/480V
SK-H1-QOUT-D590
Specs
Transistor Type IGBT
View Details
Current Collector high-performance aviation current collector DHK160-3-90A for an aerospace - - JiuJiang Ingiant Technology Co., Ltd.
JiuJiang Ingiant Technology Co., Ltd.
Current Collector high-performance aviation current collector DHK160-3-90A for an aerospace
View Details
45 V, 1 A NPN medium power transistors - BC54PASX - Nexperia B.V.
Nexperia B.V.
45 V, 1 A NPN medium power transistors
BC54PASX
Specs
Package Type SOT1061D SOT1061D
View Details
6 suppliers
IGBT - 192352315 - Radwell International
Fuji Electric Corp. of America
IGBT
2MBI200TE-060
Specs
Transistor Type IGBT
View Details