VBsemi Electronics Co. Ltd. Transistors VBL1101N

Description
100V 100A 250W 10mΩ@10V,30A 4V@250uA 1 N-Channel TO-263 MOSFETs ROHS
  • Transistors - VBL1101N - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote
Description
100V 100A 250W 10mΩ@10V,30A 4V@250uA 1 N-Channel TO-263 MOSFETs ROHS
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Transistors - VBL1101N - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
VBL1101N
Transistors VBL1101N
100V 100A 250W 10mΩ@10V,30A 4V@250uA 1 N-Channel TO-263 MOSFETs ROHS

100V 100A 250W 10mΩ@10V,30A 4V@250uA 1 N-Channel TO-263 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number VBL1101N
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

- LM5100BMA/NOPB - Rochester Electronics
Texas Instruments
LM5100BMA/NOPB
Specs
Transistor Type MOSFET
Package Type SOIC8
View Details
Igbt, Module, Dual N Channel, 1.2Kv, 1.2Ka; Continuous Collector Current Fuji Electric - 54W0214 - Newark, An Avnet Company
Fuji Electric Corp. of America
Igbt, Module, Dual N Channel, 1.2Kv, 1.2Ka; Continuous Collector Current Fuji Electric
2MBI900VXA-120E-50
Specs
Transistor Type IGBT
Polarity N-Channel
Package Type TO-3
View Details
TRANSISTORS - Transistors (BJT) - Single - 2SA1626-AZ - 855051-2SA1626-AZ - Win Source Electronics
Rochester Electronics
TRANSISTORS - Transistors (BJT) - Single - 2SA1626-AZ
2SA1626-AZ
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details
Quad/Dual N-Channel Depletion Mode MOSFET Array/Pair - ALD114913PAL - Advanced Linear Devices, Inc.
Advanced Linear Devices, Inc.
Quad/Dual N-Channel Depletion Mode MOSFET Array/Pair
ALD114913PAL
Specs
Transistor Type MOSFET
Polarity N-Channel
Package Type PDIP8
View Details
3 suppliers