VBsemi Electronics Co. Ltd. Transistors VBJ1101M

Description
100V 4.5A 1.7W 110mΩ@10V,6A 3V@250uA 1 N-Channel SOT-223-3 MOSFETs ROHS
  • Transistors - VBJ1101M - ODG (Origin Data Global)
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Description
100V 4.5A 1.7W 110mΩ@10V,6A 3V@250uA 1 N-Channel SOT-223-3 MOSFETs ROHS
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Transistors - VBJ1101M - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
VBJ1101M
Transistors VBJ1101M
100V 4.5A 1.7W 110mΩ@10V,6A 3V@250uA 1 N-Channel SOT-223-3 MOSFETs ROHS

100V 4.5A 1.7W 110mΩ@10V,6A 3V@250uA 1 N-Channel SOT-223-3 MOSFETs ROHS

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Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number VBJ1101M
Product Name Transistors
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