VBsemi Electronics Co. Ltd. Transistors VBFB2610N

Description
60V 20A 66mΩ@10V,30A 35W 2.5V@250uA 1 Piece P-Channel TO-251 MOSFETs ROHS
Description
60V 20A 66mΩ@10V,30A 35W 2.5V@250uA 1 Piece P-Channel TO-251 MOSFETs ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - VBFB2610N - ODG (Origin Data Global)
Shenzhen, China
Transistors
VBFB2610N
Transistors VBFB2610N
60V 20A 66mΩ@10V,30A 35W 2.5V@250uA 1 Piece P-Channel TO-251 MOSFETs ROHS

60V 20A 66mΩ@10V,30A 35W 2.5V@250uA 1 Piece P-Channel TO-251 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number VBFB2610N
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

IGBT Module - 66040976 - Radwell International
Fuji Electric Corp. of America
Specs
Transistor Type IGBT
View Details
45 V, 500 mA PNP general-purpose transistors - BC807-40W,135 - Nexperia B.V.
Specs
Transistor Type BJT
Package Type SOT323; SOT323 SOT323
View Details
6 suppliers
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMDQ75R090M1H - AIMDQ75R090M1H - Infineon Technologies AG
Specs
Transistor Type MOSFET
Polarity N-Channel; N
Transistor Technology / Material Silicon carbide
View Details
Transistor - 26175713 - Radwell International
Allen-Bradley / Rockwell Automation
View Details