VBsemi Electronics Co. Ltd. Transistors VBE5415

Description
40V 50A 14mΩ@10V,38A 108W 3V@250uA 1 N-Channel + 1 P-Channel TO-252-4 MOSFETs ROHS
Description
40V 50A 14mΩ@10V,38A 108W 3V@250uA 1 N-Channel + 1 P-Channel TO-252-4 MOSFETs ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - VBE5415 - ODG (Origin Data Global)
Shenzhen, China
Transistors
VBE5415
Transistors VBE5415
40V 50A 14mΩ@10V,38A 108W 3V@250uA 1 N-Channel + 1 P-Channel TO-252-4 MOSFETs ROHS

40V 50A 14mΩ@10V,38A 108W 3V@250uA 1 N-Channel + 1 P-Channel TO-252-4 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number VBE5415
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

Fuji Electric Corp. of America
Specs
Transistor Type MOSFET
View Details
80 V, 1 A PNP medium power transistors - BC53PAST-QX - Nexperia B.V.
Specs
Package Type SOT1061D SOT1061D
View Details
2 suppliers
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMZH120R020M1T - AIMZH120R020M1T - Infineon Technologies AG
Specs
Transistor Type MOSFET
Polarity N-Channel; N
Transistor Technology / Material Silicon carbide
View Details
1450A IGBT MODULE FOR ONE PHASE - SK-H1-QOUT-D1K4 - Allen-Bradley / Rockwell Automation
Allen-Bradley / Rockwell Automation
Specs
Transistor Type IGBT
View Details