VBsemi Electronics Co. Ltd. Transistors VBE2102M

Description
100V 8.8A 350mΩ@4.5V,3.4A 32.1W 2.5V@250uA 1 Piece P-Channel TO-252-2 MOSFETs ROHS
Request a Quote
Description
100V 8.8A 350mΩ@4.5V,3.4A 32.1W 2.5V@250uA 1 Piece P-Channel TO-252-2 MOSFETs ROHS
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Transistors - VBE2102M - ODG (Origin Data Global)
Shenzhen, China
Transistors
VBE2102M
Transistors VBE2102M
100V 8.8A 350mΩ@4.5V,3.4A 32.1W 2.5V@250uA 1 Piece P-Channel TO-252-2 MOSFETs ROHS

100V 8.8A 350mΩ@4.5V,3.4A 32.1W 2.5V@250uA 1 Piece P-Channel TO-252-2 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number VBE2102M
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

50 V, 100 mA NPN general purpose transistor - 2PD601ARW,115 - Nexperia B.V.
Specs
Transistor Type BJT
Polarity NPN
Package Type SOT323; SOT323
View Details
3 suppliers
Fuji Electric Corp. of America
Specs
Transistor Type Bipolar RF
View Details