VBsemi Electronics Co. Ltd. Transistors VBE2102M

Description
100V 8.8A 350mΩ@4.5V,3.4A 32.1W 2.5V@250uA 1 Piece P-Channel TO-252-2 MOSFETs ROHS
  • Transistors - VBE2102M - ODG (Origin Data Global)
    ODG (Origin Data Global)
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Description
100V 8.8A 350mΩ@4.5V,3.4A 32.1W 2.5V@250uA 1 Piece P-Channel TO-252-2 MOSFETs ROHS
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Transistors - VBE2102M - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
VBE2102M
Transistors VBE2102M
100V 8.8A 350mΩ@4.5V,3.4A 32.1W 2.5V@250uA 1 Piece P-Channel TO-252-2 MOSFETs ROHS

100V 8.8A 350mΩ@4.5V,3.4A 32.1W 2.5V@250uA 1 Piece P-Channel TO-252-2 MOSFETs ROHS

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Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number VBE2102M
Product Name Transistors
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