VBsemi Electronics Co. Ltd. Transistors VBE18R09S

Description
800V 9A 510mΩ@10V 4V 1 N-Channel TO-252 MOSFETs ROHS
  • Transistors - VBE18R09S - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
800V 9A 510mΩ@10V 4V 1 N-Channel TO-252 MOSFETs ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - VBE18R09S - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
VBE18R09S
Transistors VBE18R09S
800V 9A 510mΩ@10V 4V 1 N-Channel TO-252 MOSFETs ROHS

800V 9A 510mΩ@10V 4V 1 N-Channel TO-252 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number VBE18R09S
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

IGBT Module - 444054 - Radwell International
Fuji Electric Corp. of America
IGBT Module
2MBI200N-120
Specs
Transistor Type IGBT
View Details
60 V, 1 A NPN medium power transistors - BC55PASX - Nexperia B.V.
Nexperia B.V.
60 V, 1 A NPN medium power transistors
BC55PASX
Specs
Package Type SOT1061D SOT1061D
View Details
8 suppliers
Single FETs, MOSFETs - 448-AIMBG120R080M1XTMA1TR-ND - DigiKey
Infineon Technologies AG
Single FETs, MOSFETs
AIMBG120R080M1XTMA1
Specs
Polarity N-Channel
Transistor Technology / Material Silicon Carbide
Package Type TO-263; TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
View Details
2 suppliers
650A Igbt Module For One Phase 400/480V - SK-H1-QOUT-D650 - Allen-Bradley / Rockwell Automation
Allen-Bradley / Rockwell Automation
650A Igbt Module For One Phase 400/480V
SK-H1-QOUT-D650
Specs
Transistor Type IGBT
View Details