VBsemi Electronics Co. Ltd. Transistors VBE18R09S

Description
800V 9A 510mΩ@10V 4V 1 N-Channel TO-252 MOSFETs ROHS
  • Transistors - VBE18R09S - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
800V 9A 510mΩ@10V 4V 1 N-Channel TO-252 MOSFETs ROHS

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Description
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Transistors - VBE18R09S - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
VBE18R09S
Transistors VBE18R09S
800V 9A 510mΩ@10V 4V 1 N-Channel TO-252 MOSFETs ROHS

800V 9A 510mΩ@10V 4V 1 N-Channel TO-252 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number VBE18R09S
Product Name Transistors
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