VBsemi Electronics Co. Ltd. Transistors VBE1206N

Description
200V 30A 55mΩ@10V,3A 96W 4V@250uA 1 N-Channel TO-252 MOSFETs ROHS
  • Transistors - VBE1206N - ODG (Origin Data Global)
    ODG (Origin Data Global)
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Description
200V 30A 55mΩ@10V,3A 96W 4V@250uA 1 N-Channel TO-252 MOSFETs ROHS
Request a Quote

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Transistors - VBE1206N - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
VBE1206N
Transistors VBE1206N
200V 30A 55mΩ@10V,3A 96W 4V@250uA 1 N-Channel TO-252 MOSFETs ROHS

200V 30A 55mΩ@10V,3A 96W 4V@250uA 1 N-Channel TO-252 MOSFETs ROHS

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Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number VBE1206N
Product Name Transistors
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