VBsemi Electronics Co. Ltd. Transistors VBE1206N

Description
200V 30A 55mΩ@10V,3A 96W 4V@250uA 1 N-Channel TO-252 MOSFETs ROHS
  • Transistors - VBE1206N - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote
Description
200V 30A 55mΩ@10V,3A 96W 4V@250uA 1 N-Channel TO-252 MOSFETs ROHS
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Transistors - VBE1206N - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
VBE1206N
Transistors VBE1206N
200V 30A 55mΩ@10V,3A 96W 4V@250uA 1 N-Channel TO-252 MOSFETs ROHS

200V 30A 55mΩ@10V,3A 96W 4V@250uA 1 N-Channel TO-252 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number VBE1206N
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products