VBsemi Electronics Co. Ltd. Transistors VBE1203M

Description
200V 10A 245mΩ@10V,3A 96W 4V@250uA 1 N-Channel TO-252 MOSFETs ROHS
  • Transistors - VBE1203M - ODG (Origin Data Global)
    ODG (Origin Data Global)
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Description
200V 10A 245mΩ@10V,3A 96W 4V@250uA 1 N-Channel TO-252 MOSFETs ROHS
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Transistors - VBE1203M - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
VBE1203M
Transistors VBE1203M
200V 10A 245mΩ@10V,3A 96W 4V@250uA 1 N-Channel TO-252 MOSFETs ROHS

200V 10A 245mΩ@10V,3A 96W 4V@250uA 1 N-Channel TO-252 MOSFETs ROHS

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Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number VBE1203M
Product Name Transistors
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