VBsemi Electronics Co. Ltd. Transistors VBE1158N

Description
150V 15.5A 3.1W 74mΩ@10V,5A 3V@250uA 1 N-Channel TO-252 MOSFETs ROHS
  • Transistors - VBE1158N - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
150V 15.5A 3.1W 74mΩ@10V,5A 3V@250uA 1 N-Channel TO-252 MOSFETs ROHS

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Transistors - VBE1158N - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
VBE1158N
Transistors VBE1158N
150V 15.5A 3.1W 74mΩ@10V,5A 3V@250uA 1 N-Channel TO-252 MOSFETs ROHS

150V 15.5A 3.1W 74mΩ@10V,5A 3V@250uA 1 N-Channel TO-252 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number VBE1158N
Product Name Transistors
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