VBsemi Electronics Co. Ltd. Transistors VBE1106N

Description
100V 25A 62mΩ@4.5V,8A 83W 1.6V@250uA 1 N-Channel TO-252-2 MOSFETs ROHS
  • Transistors - VBE1106N - ODG (Origin Data Global)
    ODG (Origin Data Global)
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Description
100V 25A 62mΩ@4.5V,8A 83W 1.6V@250uA 1 N-Channel TO-252-2 MOSFETs ROHS
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Transistors - VBE1106N - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
VBE1106N
Transistors VBE1106N
100V 25A 62mΩ@4.5V,8A 83W 1.6V@250uA 1 N-Channel TO-252-2 MOSFETs ROHS

100V 25A 62mΩ@4.5V,8A 83W 1.6V@250uA 1 N-Channel TO-252-2 MOSFETs ROHS

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Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number VBE1106N
Product Name Transistors
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