VBsemi Electronics Co. Ltd. Transistors VBE1101N

Description
100V 85A 10mΩ@10V,30A 3.25W 3V@250uA 1 N-Channel TO-252 MOSFETs ROHS
  • Transistors - VBE1101N - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote
Description
100V 85A 10mΩ@10V,30A 3.25W 3V@250uA 1 N-Channel TO-252 MOSFETs ROHS
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Transistors - VBE1101N - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
VBE1101N
Transistors VBE1101N
100V 85A 10mΩ@10V,30A 3.25W 3V@250uA 1 N-Channel TO-252 MOSFETs ROHS

100V 85A 10mΩ@10V,30A 3.25W 3V@250uA 1 N-Channel TO-252 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number VBE1101N
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

Single FETs, MOSFETs - UJ3C120070K3S - ODG (Origin Data Global)
Qorvo
Single FETs, MOSFETs
UJ3C120070K3S
Specs
Transistor Type JFET; MOSFET; SiCFET (Cascode SiCJFET)
Polarity N-Channel; N-Channel
Transistor Technology / Material SiCFET (Cascode SiCJFET)
View Details
3 suppliers
TRANSISTORS - Transistors (BJT) - Single - 2SA1317T - 855026-2SA1317T - Win Source Electronics
Rochester Electronics
TRANSISTORS - Transistors (BJT) - Single - 2SA1317T
2SA1317T
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details
Current Collector high-performance aviation current collector DHK160-3-90A for an aerospace - - JiuJiang Ingiant Technology Co., Ltd.
JiuJiang Ingiant Technology Co., Ltd.
Current Collector high-performance aviation current collector DHK160-3-90A for an aerospace
View Details
PRECISION N-CHANNEL EPAD® MOSFET ARRAY DUAL HIGH DRIVE MATCHED PAIR - ALD212908APAL - Advanced Linear Devices, Inc.
Advanced Linear Devices, Inc.
PRECISION N-CHANNEL EPAD® MOSFET ARRAY DUAL HIGH DRIVE MATCHED PAIR
ALD212908APAL
Specs
Transistor Type MOSFET
Polarity N-Channel
Package Type PDIP8
View Details
4 suppliers