VBsemi Electronics Co. Ltd. Transistors VBA2305

Description
30V 18A 5mΩ@10V,18A 5.6W 2.2V@250uA 1 Piece P-Channel SO-8 MOSFETs ROHS
  • Transistors - VBA2305 - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
30V 18A 5mΩ@10V,18A 5.6W 2.2V@250uA 1 Piece P-Channel SO-8 MOSFETs ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - VBA2305 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
VBA2305
Transistors VBA2305
30V 18A 5mΩ@10V,18A 5.6W 2.2V@250uA 1 Piece P-Channel SO-8 MOSFETs ROHS

30V 18A 5mΩ@10V,18A 5.6W 2.2V@250uA 1 Piece P-Channel SO-8 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number VBA2305
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

Igbt, Module, Triple N Channel, 1.7Kv, 3.6Ka; Continuous Collector Current Fuji Electric - 54W0202 - Newark, An Avnet Company
Fuji Electric Corp. of America
Igbt, Module, Triple N Channel, 1.7Kv, 3.6Ka; Continuous Collector Current Fuji Electric
1MBI2400U4D-170
Specs
Transistor Type IGBT
Polarity N-Channel
Package Type TO-3
View Details
80 V, 1 A PNP medium power transistors - BC53-10PA,115 - Nexperia B.V.
Nexperia B.V.
80 V, 1 A PNP medium power transistors
BC53-10PA,115
Specs
Package Type SOT1061 SOT1061
View Details
6 suppliers
Single FETs, MOSFETs - 448-AIMZHN120R020M1TXKSA1-ND - DigiKey
Infineon Technologies AG
Single FETs, MOSFETs
AIMZHN120R020M1TXKSA1
Specs
Polarity N-Channel
Transistor Technology / Material Silicon Carbide
Package Type TO-247; TO-247-4
View Details
Transistor - 4700471 - Radwell International
Allen-Bradley / Rockwell Automation
Transistor
501609
View Details