VBsemi Electronics Co. Ltd. Transistors TK16G60W-VB

Description
650V 190mΩ@10V 3.5V 1 N-Channel TO-263 MOSFETs ROHS
Description
650V 190mΩ@10V 3.5V 1 N-Channel TO-263 MOSFETs ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - TK16G60W-VB - ODG (Origin Data Global)
Shenzhen, China
Transistors
TK16G60W-VB
Transistors TK16G60W-VB
650V 190mΩ@10V 3.5V 1 N-Channel TO-263 MOSFETs ROHS

650V 190mΩ@10V 3.5V 1 N-Channel TO-263 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number TK16G60W-VB
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

IGBT Module - 42026827 - Radwell International
Fuji Electric Corp. of America
Specs
Transistor Type IGBT
View Details
High Reliability - Defense - Power - HiRel MOSFETs - Single channel high reliability power MOSFETs - 2N6796 - 2N6796 - Infineon Technologies AG
Specs
Transistor Type MOSFET; Power-MOSFET
Polarity N-Channel; N
Package Type M-TO205-3
View Details
3 suppliers
Transistor - 343728 - Radwell International
Allen-Bradley / Rockwell Automation
View Details