VBsemi Electronics Co. Ltd. Transistors SUP90N15-18P-E3-VB

Description
TO-220AB MOSFETs ROHS
  • Transistors - SUP90N15-18P-E3-VB - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote
Description
TO-220AB MOSFETs ROHS
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Transistors - SUP90N15-18P-E3-VB - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
SUP90N15-18P-E3-VB
Transistors SUP90N15-18P-E3-VB
TO-220AB MOSFETs ROHS

TO-220AB MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number SUP90N15-18P-E3-VB
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

IGBT Module - 34552909 - Radwell International
Fuji Electric Corp. of America
IGBT Module
7MBR35SB-120-50
Specs
Transistor Type IGBT
View Details
2 suppliers
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMDQ75R016M2H - AIMDQ75R016M2H - Infineon Technologies AG
Infineon Technologies AG
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMDQ75R016M2H
AIMDQ75R016M2H
Specs
Transistor Type MOSFET
Polarity N-Channel; N
Transistor Technology / Material Silicon carbide
View Details
MOSFETs - 1220606 - RS Components, Ltd.
RS Components, Ltd.
MOSFETs
1220606
Specs
Transistor Type MOSFET
Polarity N-Channel
Package Type SOT23; Sot-23
View Details
DC - 4.0 GHz, 200 Watt Peak, 40 Watt Avg. Power, 50 Volt, GaN RF Power Transistor - TGF2819-FS - Qorvo
Qorvo
DC - 4.0 GHz, 200 Watt Peak, 40 Watt Avg. Power, 50 Volt, GaN RF Power Transistor
TGF2819-FS
Specs
Transistor Technology / Material DC - 4.0 GHz, 200 Watt Peak, 40 Watt Avg. Power, 50 Volt, GaN RF Power Transistor
Package Type NI-360
Transistor Grade / Operating Range Military
View Details