VBsemi Electronics Co. Ltd. Transistors SSP70N10A-VB

Description
100V 70A 18mΩ@10V,30A 355W 4V@250uA 1 N-Channel TO-220AB-3 MOSFETs ROHS
  • Transistors - SSP70N10A-VB - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
100V 70A 18mΩ@10V,30A 355W 4V@250uA 1 N-Channel TO-220AB-3 MOSFETs ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - SSP70N10A-VB - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
SSP70N10A-VB
Transistors SSP70N10A-VB
100V 70A 18mΩ@10V,30A 355W 4V@250uA 1 N-Channel TO-220AB-3 MOSFETs ROHS

100V 70A 18mΩ@10V,30A 355W 4V@250uA 1 N-Channel TO-220AB-3 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number SSP70N10A-VB
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

Transistor - - Radwell International
Fuji Electric Corp. of America
Transistor
2SK117
View Details
60 V, 1 A NPN medium power transistors - BC55PA-QX - Nexperia B.V.
Nexperia B.V.
60 V, 1 A NPN medium power transistors
BC55PA-QX
Specs
Package Type SOT1061 SOT1061
View Details
2 suppliers
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMBG75R020M1H - AIMBG75R020M1H - Infineon Technologies AG
Infineon Technologies AG
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMBG75R020M1H
AIMBG75R020M1H
Specs
Transistor Type MOSFET
Polarity N-Channel; N
Transistor Technology / Material Silicon carbide
View Details
Transistor - 175624388 - Radwell International
Allen-Bradley / Rockwell Automation
Transistor
708A562
View Details