VBsemi Electronics Co. Ltd. Transistors SQ4435EY-T1-GE3-VB

Description
30V 9A 18mΩ@10V 1 Piece P-Channel SO-8 MOSFETs ROHS
  • Transistors - SQ4435EY-T1-GE3-VB - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
30V 9A 18mΩ@10V 1 Piece P-Channel SO-8 MOSFETs ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - SQ4435EY-T1-GE3-VB - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
SQ4435EY-T1-GE3-VB
Transistors SQ4435EY-T1-GE3-VB
30V 9A 18mΩ@10V 1 Piece P-Channel SO-8 MOSFETs ROHS

30V 9A 18mΩ@10V 1 Piece P-Channel SO-8 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number SQ4435EY-T1-GE3-VB
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

Transistor - 66059520 - Radwell International
Fuji Electric Corp. of America
Transistor
2DI240A-055
View Details
20 V, 2 A NPN medium power transistors - BC68-25PA-QX - Nexperia B.V.
Nexperia B.V.
20 V, 2 A NPN medium power transistors
BC68-25PA-QX
Specs
Package Type SOT1061 SOT1061
View Details
4 suppliers
IGBTs - Single - AIKW20N60CTXKSA1 - 860802-AIKW20N60CTXKSA1 - Win Source Electronics
Infineon Technologies AG
IGBTs - Single - AIKW20N60CTXKSA1
AIKW20N60CTXKSA1
Specs
Package Type SOT3; PG-TO247-3-41
View Details
7 suppliers
1180A IGBT MODULE FOR ONE PHASE - SK-H1-QOUT-E1K1 - Allen-Bradley / Rockwell Automation
Allen-Bradley / Rockwell Automation
1180A IGBT MODULE FOR ONE PHASE
SK-H1-QOUT-E1K1
Specs
Transistor Type IGBT
View Details