VBsemi Electronics Co. Ltd. Transistors SIR418DP-T1-GE3-VB

Description
40V 4.7mΩ@10V 1.9V 1 N-Channel DFN-8(5x6) MOSFETs ROHS
  • Transistors - SIR418DP-T1-GE3-VB - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
40V 4.7mΩ@10V 1.9V 1 N-Channel DFN-8(5x6) MOSFETs ROHS

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Transistors - SIR418DP-T1-GE3-VB - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
SIR418DP-T1-GE3-VB
Transistors SIR418DP-T1-GE3-VB
40V 4.7mΩ@10V 1.9V 1 N-Channel DFN-8(5x6) MOSFETs ROHS

40V 4.7mΩ@10V 1.9V 1 N-Channel DFN-8(5x6) MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number SIR418DP-T1-GE3-VB
Product Name Transistors
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