VBsemi Electronics Co. Ltd. Transistors SIR410DP-T1-GE3-VB

Description
30V 160A 1.8mΩ@10V 1 N-Channel DFN-8(5x6) MOSFETs ROHS
  • Transistors - SIR410DP-T1-GE3-VB - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
30V 160A 1.8mΩ@10V 1 N-Channel DFN-8(5x6) MOSFETs ROHS

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Transistors - SIR410DP-T1-GE3-VB - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
SIR410DP-T1-GE3-VB
Transistors SIR410DP-T1-GE3-VB
30V 160A 1.8mΩ@10V 1 N-Channel DFN-8(5x6) MOSFETs ROHS

30V 160A 1.8mΩ@10V 1 N-Channel DFN-8(5x6) MOSFETs ROHS

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Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number SIR410DP-T1-GE3-VB
Product Name Transistors
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