VBsemi Electronics Co. Ltd. Transistors SiHG35N60E-VB

Description
600V 31A 90mΩ@10V 4.5V 1 N-Channel TO-247 MOSFETs ROHS
  • Transistors - SiHG35N60E-VB - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
600V 31A 90mΩ@10V 4.5V 1 N-Channel TO-247 MOSFETs ROHS

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Transistors - SiHG35N60E-VB - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
SiHG35N60E-VB
Transistors SiHG35N60E-VB
600V 31A 90mΩ@10V 4.5V 1 N-Channel TO-247 MOSFETs ROHS

600V 31A 90mΩ@10V 4.5V 1 N-Channel TO-247 MOSFETs ROHS

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Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number SiHG35N60E-VB
Product Name Transistors
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