VBsemi Electronics Co. Ltd. Transistors SiHD11N80AE-VB

Description
800V 9A 510mΩ@10V 4V 1 N-Channel TO-252 MOSFETs ROHS
  • Transistors - SiHD11N80AE-VB - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
800V 9A 510mΩ@10V 4V 1 N-Channel TO-252 MOSFETs ROHS

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Transistors - SiHD11N80AE-VB - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
SiHD11N80AE-VB
Transistors SiHD11N80AE-VB
800V 9A 510mΩ@10V 4V 1 N-Channel TO-252 MOSFETs ROHS

800V 9A 510mΩ@10V 4V 1 N-Channel TO-252 MOSFETs ROHS

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Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number SiHD11N80AE-VB
Product Name Transistors
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