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CATALOGS
TRANSISTORS
VBSEMI ELECTRONICS CO. LTD.
SIHB12N60E-GE3-VB -- TRANSISTORS
VBsemi Electronics Co. Ltd.
Transistors
SiHB12N60E-GE3-VB
Description
650V 430mΩ@10V 3.5V 1 N-Channel TO-263 MOSFETs ROHS
ODG (Origin Data Global)
Done
Description
650V 430mΩ@10V 3.5V 1 N-Channel TO-263 MOSFETs ROHS
Suppliers
Company
Product
Description
Supplier Links
ODG (Origin Data Global)
Shenzhen, China
Transistors
SiHB12N60E-GE3-VB
Transistors
SiHB12N60E-GE3-VB
650V 430mΩ@10V 3.5V 1 N-Channel TO-263 MOSFETs ROHS
650V 430mΩ@10V 3.5V 1 N-Channel TO-263 MOSFETs ROHS
Supplier's Site
Technical Specifications
ODG (Origin Data Global)
Product Category
Transistors
Product Number
SiHB12N60E-GE3-VB
Product Name
Transistors
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