VBsemi Electronics Co. Ltd. Transistors SiHB12N60E-GE3-VB

Description
650V 430mΩ@10V 3.5V 1 N-Channel TO-263 MOSFETs ROHS
  • Transistors - SiHB12N60E-GE3-VB - ODG (Origin Data Global)
    ODG (Origin Data Global)
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Description
650V 430mΩ@10V 3.5V 1 N-Channel TO-263 MOSFETs ROHS
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Transistors - SiHB12N60E-GE3-VB - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
SiHB12N60E-GE3-VB
Transistors SiHB12N60E-GE3-VB
650V 430mΩ@10V 3.5V 1 N-Channel TO-263 MOSFETs ROHS

650V 430mΩ@10V 3.5V 1 N-Channel TO-263 MOSFETs ROHS

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Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number SiHB12N60E-GE3-VB
Product Name Transistors
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