VBsemi Electronics Co. Ltd. Transistors SI7884DP-T1-GE3-VB

Description
30V 7mΩ@10V 820mV 1 N-Channel DFN-8(5x6) MOSFETs ROHS
  • Transistors - SI7884DP-T1-GE3-VB - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
30V 7mΩ@10V 820mV 1 N-Channel DFN-8(5x6) MOSFETs ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - SI7884DP-T1-GE3-VB - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
SI7884DP-T1-GE3-VB
Transistors SI7884DP-T1-GE3-VB
30V 7mΩ@10V 820mV 1 N-Channel DFN-8(5x6) MOSFETs ROHS

30V 7mΩ@10V 820mV 1 N-Channel DFN-8(5x6) MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number SI7884DP-T1-GE3-VB
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

Igbt Module, 2.6V, 15A; Continuous Collector Current Fuji Electric - 56P5496 - Newark, An Avnet Company
Fuji Electric Corp. of America
Igbt Module, 2.6V, 15A; Continuous Collector Current Fuji Electric
6MBI15S-120-50
Specs
Transistor Type IGBT
Package Type TO-3
View Details
45 V, 500 mA NPN general-purpose transistors - BC817-25-QVL - Nexperia B.V.
Nexperia B.V.
45 V, 500 mA NPN general-purpose transistors
BC817-25-QVL
Specs
Transistor Type BJT
Package Type SOT23; SOT23 SOT23
View Details
2 suppliers
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMDQ75R090M1H - AIMDQ75R090M1H - Infineon Technologies AG
Infineon Technologies AG
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMDQ75R090M1H
AIMDQ75R090M1H
Specs
Transistor Type MOSFET
Polarity N-Channel; N
Transistor Technology / Material Silicon carbide
View Details
Transistor - 26175858 - Radwell International
Allen-Bradley / Rockwell Automation
Transistor
SP-140578
View Details