VBsemi Electronics Co. Ltd. Transistors SI7386DP-T1-GE3-VB

Description
30V 7mΩ@10V 820mV 1 N-Channel DFN-8(5x6) MOSFETs ROHS
  • Transistors - SI7386DP-T1-GE3-VB - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
30V 7mΩ@10V 820mV 1 N-Channel DFN-8(5x6) MOSFETs ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - SI7386DP-T1-GE3-VB - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
SI7386DP-T1-GE3-VB
Transistors SI7386DP-T1-GE3-VB
30V 7mΩ@10V 820mV 1 N-Channel DFN-8(5x6) MOSFETs ROHS

30V 7mΩ@10V 820mV 1 N-Channel DFN-8(5x6) MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number SI7386DP-T1-GE3-VB
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

CSD16404Q5A N-Channel NexFET™ Power MOSFET - CSD16404Q5A - Texas Instruments
Texas Instruments
CSD16404Q5A N-Channel NexFET™ Power MOSFET
CSD16404Q5A
Specs
Transistor Type Power-MOSFET
Polarity N-Channel
Package Type SON5x6
View Details
9 suppliers
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMZH120R120M1T - AIMZH120R120M1T - Infineon Technologies AG
Infineon Technologies AG
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMZH120R120M1T
AIMZH120R120M1T
Specs
Transistor Type MOSFET
Polarity N-Channel; N
Transistor Technology / Material Silicon carbide
View Details
Bipolar Transistors - 1221255 - RS Components, Ltd.
RS Components, Ltd.
Bipolar Transistors
1221255
Specs
Transistor Type BJT
Polarity NPN
Package Type TO-92; To-92
View Details
Current Collector high-performance aviation current collector DHK160-3-90A for an aerospace - - JiuJiang Ingiant Technology Co., Ltd.
JiuJiang Ingiant Technology Co., Ltd.
Current Collector high-performance aviation current collector DHK160-3-90A for an aerospace
View Details