VBsemi Electronics Co. Ltd. Transistors SI7366DP-T1-GE3-VB

Description
30V 7mΩ@10V 820mV 1 N-Channel DFN-8(5x6) MOSFETs ROHS
  • Transistors - SI7366DP-T1-GE3-VB - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
30V 7mΩ@10V 820mV 1 N-Channel DFN-8(5x6) MOSFETs ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - SI7366DP-T1-GE3-VB - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
SI7366DP-T1-GE3-VB
Transistors SI7366DP-T1-GE3-VB
30V 7mΩ@10V 820mV 1 N-Channel DFN-8(5x6) MOSFETs ROHS

30V 7mΩ@10V 820mV 1 N-Channel DFN-8(5x6) MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number SI7366DP-T1-GE3-VB
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

Igbt, 1.2Kv, 25A, Module; Continuous Collector Current Fuji Electric - 76R7174 - Newark, An Avnet Company
Fuji Electric Corp. of America
Igbt, 1.2Kv, 25A, Module; Continuous Collector Current Fuji Electric
7MBR25SA-120-50
Specs
Transistor Type IGBT
Package Type TO-3
View Details
2 suppliers
PNP general purpose transistor - 2PB1219AS,135 - Nexperia B.V.
Nexperia B.V.
PNP general purpose transistor
2PB1219AS,135
Specs
Transistor Type BJT
Package Type SOT323; SOT323 SOT323
View Details
6 suppliers
Discrete Semiconductor Products - Transistors - IGBTs - 6PS03012E33G34160NOSA1 - Shenzhen Shengyu Electronics Technology Limited
Infineon Technologies AG
Discrete Semiconductor Products - Transistors - IGBTs
6PS03012E33G34160NOSA1
Specs
Transistor Type IGBT
View Details
Transistor - 21974632 - Radwell International
Allen-Bradley / Rockwell Automation
Transistor
SP-142751
View Details