VBsemi Electronics Co. Ltd. Transistors SI4922BDY-T1-E3-VB

Description
30V 8.5A 16mΩ@10V 3.1W 1 N-Channel SOP8 MOSFETs ROHS
  • Transistors - SI4922BDY-T1-E3-VB - ODG (Origin Data Global)
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Description
30V 8.5A 16mΩ@10V 3.1W 1 N-Channel SOP8 MOSFETs ROHS
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Transistors - SI4922BDY-T1-E3-VB - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
SI4922BDY-T1-E3-VB
Transistors SI4922BDY-T1-E3-VB
30V 8.5A 16mΩ@10V 3.1W 1 N-Channel SOP8 MOSFETs ROHS

30V 8.5A 16mΩ@10V 3.1W 1 N-Channel SOP8 MOSFETs ROHS

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Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number SI4922BDY-T1-E3-VB
Product Name Transistors
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