VBsemi Electronics Co. Ltd. Transistors SI2324DS-T1-GE3-VB

Description
100V 2A 2.5W 240mΩ@10V,1.5A 2.8V@250uA 1 N-Channel SOT-23 MOSFETs ROHS
  • Transistors - SI2324DS-T1-GE3-VB - ODG (Origin Data Global)
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Description
100V 2A 2.5W 240mΩ@10V,1.5A 2.8V@250uA 1 N-Channel SOT-23 MOSFETs ROHS
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Transistors - SI2324DS-T1-GE3-VB - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
SI2324DS-T1-GE3-VB
Transistors SI2324DS-T1-GE3-VB
100V 2A 2.5W 240mΩ@10V,1.5A 2.8V@250uA 1 N-Channel SOT-23 MOSFETs ROHS

100V 2A 2.5W 240mΩ@10V,1.5A 2.8V@250uA 1 N-Channel SOT-23 MOSFETs ROHS

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Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number SI2324DS-T1-GE3-VB
Product Name Transistors
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