VBsemi Electronics Co. Ltd. Transistors SI2307CDS-T1-GE3-VB

Description
30V 5.6A 47mΩ@10V 1 Piece P-Channel SOT-23 MOSFETs ROHS
  • Transistors - SI2307CDS-T1-GE3-VB - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
30V 5.6A 47mΩ@10V 1 Piece P-Channel SOT-23 MOSFETs ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - SI2307CDS-T1-GE3-VB - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
SI2307CDS-T1-GE3-VB
Transistors SI2307CDS-T1-GE3-VB
30V 5.6A 47mΩ@10V 1 Piece P-Channel SOT-23 MOSFETs ROHS

30V 5.6A 47mΩ@10V 1 Piece P-Channel SOT-23 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number SI2307CDS-T1-GE3-VB
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

IGBT - 221037800 - Radwell International
Fuji Electric Corp. of America
IGBT
2MBI150NT-120A
Specs
Transistor Type IGBT
View Details
45 V, 1 A NPN medium power transistors - BC54-16PASX - Nexperia B.V.
Nexperia B.V.
45 V, 1 A NPN medium power transistors
BC54-16PASX
Specs
Package Type SOT1061D SOT1061D
View Details
9 suppliers
- 1EDF5673KXUMA1 - Rochester Electronics
Infineon Technologies AG
1EDF5673KXUMA1
Specs
Transistor Type MOSFET
Package Type PG-TFLGA-13
View Details
Transistor - 8220858 - Radwell International
Allen-Bradley / Rockwell Automation
Transistor
1336-QOUT-SP12B
View Details