VBsemi Electronics Co. Ltd. Transistors RU1H130S-VB

Description
100V 5mΩ@10V 2V 1 N-Channel TO-263 MOSFETs ROHS
Description
100V 5mΩ@10V 2V 1 N-Channel TO-263 MOSFETs ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - RU1H130S-VB - ODG (Origin Data Global)
Shenzhen, China
Transistors
RU1H130S-VB
Transistors RU1H130S-VB
100V 5mΩ@10V 2V 1 N-Channel TO-263 MOSFETs ROHS

100V 5mΩ@10V 2V 1 N-Channel TO-263 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number RU1H130S-VB
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

IGBT Module - 111623254 - Radwell International
Fuji Electric Corp. of America
Specs
Transistor Type IGBT
View Details
45 V, 500 mA NPN general-purpose transistors - BC817K-16VL - Nexperia B.V.
Specs
Transistor Type BJT
Package Type SOT23; SOT23 SOT23
View Details
6 suppliers
High Reliability - Defense - Power - HiRel MOSFETs - Single channel high reliability power MOSFETs - 2N6770 - 2N6770 - Infineon Technologies AG
Specs
Transistor Type MOSFET; Power-MOSFET
Polarity N-Channel; N
Package Type M-TO204-3
View Details
2 suppliers
Transistor - 4700471 - Radwell International
Allen-Bradley / Rockwell Automation
View Details