VBsemi Electronics Co. Ltd. Transistors PHT6N06LT-VB

Description
60V 4.5A 76mΩ@10V 1 N-Channel SOT-223 MOSFETs ROHS
  • Transistors - PHT6N06LT-VB - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote
Description
60V 4.5A 76mΩ@10V 1 N-Channel SOT-223 MOSFETs ROHS
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Transistors - PHT6N06LT-VB - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
PHT6N06LT-VB
Transistors PHT6N06LT-VB
60V 4.5A 76mΩ@10V 1 N-Channel SOT-223 MOSFETs ROHS

60V 4.5A 76mΩ@10V 1 N-Channel SOT-223 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number PHT6N06LT-VB
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

MOSFETs - 1826901 - RS Components, Ltd.
RS Components, Ltd.
MOSFETs
1826901
Specs
Transistor Type MOSFET
Polarity N-Channel
Package Type X1-dfn1006
View Details
Integrated Circuits (ICs) - PMIC - Motor Drivers, Controllers - 1253311-DRV83053QPHPRQ1 - Win Source Electronics
Texas Instruments
Integrated Circuits (ICs) - PMIC - Motor Drivers, Controllers
DRV83053QPHPRQ1
Specs
Transistor Type MOSFET; Power-MOSFET
Package Type SOT3
View Details
Current Collector high-performance aviation current collector DHK160-3-90A for an aerospace - - JiuJiang Ingiant Technology Co., Ltd.
JiuJiang Ingiant Technology Co., Ltd.
Current Collector high-performance aviation current collector DHK160-3-90A for an aerospace
View Details
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMBG120R010M1 - AIMBG120R010M1 - Infineon Technologies AG
Infineon Technologies AG
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMBG120R010M1
AIMBG120R010M1
Specs
Transistor Type MOSFET
Polarity N-Channel; N
Transistor Technology / Material Silicon carbide
View Details